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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2877
DESCRIPTION *With TO-126 package *Complement to type 2SA1217 *Good linearity of hFE APPLICATIONS *Audio frequency power amplifier *Low speed switching *Suitable for output stage of 5 watts car radio and car stereo PINNING
PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
*
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 40 40 5 3 1 10 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=2.0A; IB=0.2A IC=0.5A ; VCE=2V VCB=40V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IC=0.5A ; VCE=2V 80 25 MIN 40
2SC2877
TYP.
MAX
UNIT V
0.8 1.0 0.1 0.1 240
V V A A
100
MHz
hFE-1 Classifications O 80-160 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2877
Fig.2 Outline dimensions
3


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